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DZT955-13

双极晶体管 - 双极结型晶体管BJT PNP 1W

- 双极 BJT - 单 PNP 150MHz 表面贴装型 SOT-223


得捷:
TRANS PNP 140V 4A SOT223-3


贸泽:
双极晶体管 - 双极结型晶体管BJT PNP 1W


艾睿:
Diodes Zetex brings you the solution to your high-voltage BJT needs with their PNP DZT955-13 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans GP BJT PNP 140V 4A 4-Pin3+Tab SOT-223 T/R


Chip1Stop:
Trans GP BJT PNP 140V 4A 4-Pin3+Tab SOT-223 T/R


Verical:
Trans GP BJT PNP 140V 4A 1000mW 4-Pin3+Tab SOT-223 T/R


Win Source:
TRANS PNP 140V 4A SOT-223


DeviceMart:
TRANS PNP 140V 4A SOT-223


DZT955-13 PDF数据文档
图片 型号 厂商 下载
DZT955-13 Diodes 美台
DZT951-13 Diodes 美台
DZT953-13 Diodes 美台