74V1G08STR

STMICROELECTRONICS  74V1G08STR  逻辑芯片, 单路2输入与门, 高速, 74V1G08, SOT23-5

逻辑类型Logic Type| 与门 AND Gate \---|--- 电路数Number of Circuits| 1 输入数Number of Inputs| 2 电源电压VccVoltage - Supply| 2V~5.5V 静态电流IqCurrent - Quiescent Max| 1uA 输出高，低电平电流Current - Output High, Low| -8mA，8mA 低逻辑电平Logic Level - Low| 0.3V~1.1V 高逻辑电平Logic Level - High| 1.7V~4.4V 传播延迟时间@Vcc，CLMax Propagation Delay @ V, Max CL| 7ns @ 4.5V ~ 5.5V，50pF Description & Applications| SINGLE 2-INPUT AND GATE;FEATURES HIGH SPEED: tPD = 3.8ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µAMAX. at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC MIN. POWER DOWN PROTECTION ON INPUT SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA MIN at VCC = 4.5V BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCCOPR = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY 描述与应用| 单路双输入与门;特性 高速：TPD =3.8ns电源（VCC = 5V时典型值） 低功耗： ICC=1μA（最大值）在TA = 25°C 高抗干扰性： VNIH= VNIL  VCC=28％（最小） 掉电保护对输入 对称的输出阻抗： | IOH= IOL  = VCC= 4.5V8毫安（MIN） 平衡传输时延： TPLH≅TPHL 工作电压范围： VCC（OPR）=2V到5.5V 改进的锁存-抗扰度