BSC016N03MSGATMA1

N沟道 30V 100A 28A

表面贴装型 N 通道 28A（Ta），100A（Tc） 2.5W（Ta），125W（Tc） PG-TDSON-8-1

得捷:
MOSFET N-CH 30V 28A/100A TDSON

立创商城:
N沟道 30V 100A 28A

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSC016N03MSGATMA1 power MOSFET is for you. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R

Win Source:
MOSFET N-CH 30V 100A TDSON-8