FDI3632

N沟道PowerTrench MOSFET的 N-Channel PowerTrench MOSFET

Features

• rDSON = 7.5mΩ Typ., VGS = 10V, ID = 80A

• Qgtot = 84nC Typ., VGS = 10V

• Low Miller Charge

• Low QRR Body Diode

• UIS Capability Single Pulse and Repetitive Pulse

• Qualified to AEC Q101

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

• Electronic Valve Train Systems

FDI3632 PDF数据文档