UP0439000L

UP0439000L NPN+PNP复合三极管 50V/-50V 100mA/-100mA 80 SOT-563 标记3V 用于开关/数字电路

Q1 集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V \---|--- Q1集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V Q1集电极连续输出电流IC Collector CurrentIC | 100MA/0.1A Q2 集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | -50V Q2集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | -50V Q2集电极连续输出电流IC Collector CurrentIC | -100MA/-0.1A Q1基极输入电阻R1 Input ResistanceR1 | 4.7kΩ Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 4.7kΩ Q1电阻比R1/R2 Q1 Resistance Ratio | 1 Q2基极输入电阻R1 Input ResistanceR1 | 10 kΩ Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 4.7kΩ Q2电阻比R1/R2 Q2 Resistance Ratio | 0.21 直流电流增益hFE DC Current GainhFE Q1/Q2 | 80/80 截止频率fT Transtion FrequencyfT Q1/Q2 | 150MHZ/80MHZ 耗散功率Pc Power Dissipation | 125MW/0.125W Description & Applications | Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type Tr2 For switching/digital circuits

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Features • Two elements incorporated into one package Transistors with built-in resistor • Reduction of the mounting area and assembly cost by one half * Basic Part Number • UNR1114 + UNR1213 描述与应用 | 　NPN型硅外延平面类型Tr1 　　PNP型硅外延平面类型Tr2 　　开关/数字电路 　　*功能 　　两个元素纳入一个包 　　 内置电阻 　　减少一半的安装面积和组装成本 　　*基本零件号 　　UNR1114 + UNR1213