IPI032N06N3GAKSA1
OptiMOSâ ?? ¢ 3功率三极管 OptiMOSâ¢3 Power-Transistor
OptiMOS™3 功率 MOSFET，60 至 80V
OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。
快速切换 MOSFET，用于 SMPS
优化技术，用于直流/直流转换器
符合目标应用的 JEDEC1 规格
N 通道，逻辑电平
极佳的栅极电荷 x R DSon 产品 FOM
极低导通电阻 R DSon
无铅电镀
得捷:
MOSFET N-CH 60V 120A TO262-3
立创商城:
N沟道 60V 120A
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPI032N06N3GAKSA1, 120 A, Vds=60 V, 3引脚 I2PAK TO-262封装
艾睿:
Make an effective common gate amplifier using this IPI032N06N3GAKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 188000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.
安富利:
Trans MOSFET N-CH 60V 120A 3-Pin3+Tab TO-262
TME:
Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Verical:
Trans MOSFET N-CH 60V 120A 3-Pin3+Tab TO-262 Tube
Win Source:
MOSFET N-CH 60V 120A TO262-3 / N-Channel 60 V 120A Tc 188W Tc Through Hole PG-TO262-3
