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IXGH6N170A

IXGH 系列 1700 Vce 6 A 46 ns ton 高压 IGBT - TO-247 AD

IGBT NPT 通孔 TO-247AD(IXGH)


得捷:
IGBT 1700V 6A 75W TO247AD


立创商城:
NPT 75W 1.7kV 6A


艾睿:
Minimize the current at your gate with the IXGH6N170A IGBT transistor from Ixys Corporation. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


Chip1Stop:
Trans IGBT Chip N-CH 1.7KV 6A 3-Pin3+Tab TO-247AD


TME:
Transistor: IGBT; 1.7kV; 6A; 75W; TO247-3


Verical:
Trans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin3+Tab TO-247AD


Win Source:
IGBT 1700V 6A 75W TO247AD


DeviceMart:
IGBT 1700V 6A TO-247AD


IXGH6N170A PDF数据文档
图片 型号 厂商 下载
IXGH6N170A IXYS Semiconductor
IXGH10N100AU1 IXYS Semiconductor
IXGH24N60B IXYS Semiconductor
IXGH30N60BD1 IXYS Semiconductor
IXGH24N60C IXYS Semiconductor
IXGH32N60C IXYS Semiconductor
IXGH32N60CD1 IXYS Semiconductor
IXGH50N60B IXYS Semiconductor
IXGH32N60B IXYS Semiconductor
IXGH24N60A IXYS Semiconductor
IXGH32N60BU1 IXYS Semiconductor