RN1965

RN1965 NPN+NPN复合带阻尼三极管 50V 100mA 80 200mW/0.2W SOT-363/US6/SC70-6 标记XXE 开关电路 逆变器 接口电路 驱动电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 100mA Q1基极输入电阻R1 Input ResistanceR1| 2.2KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio| 0.047 Q2基极输入电阻R1 Input ResistanceR1| 2.2KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio| 0.047 直流电流增益hFE DC Current GainhFE| 80 截止频率fT Transtion FrequencyfT| 250MHz 耗散功率Pc Power Dissipation| 200mW/0.2W Description & Applications| Features • TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Bias Resistor Built-in Transistor • Including two devices in US6 ultra super mini type with 6 leads • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN2961 to RN2966 APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用| 特点 •的硅NPN外延式（PCT的进程）（偏置电阻内置晶体管） •包括两个设备US6（超超级迷你型6引线） •借助内置的偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •互补RN2961~RN2966 应用 •开关，逆变电路，接口电路和驱动器电路应用