FQP13N06L

FAIRCHILD SEMICONDUCTOR  FQP13N06L  晶体管, MOSFET, N沟道, 13.6 A, 60 V, 0.088 ohm, 10 V, 2.5 V

The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.

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100% Avalanche tested

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4.8nC Typical low gate charge

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17pF Typical low Crss