ME2302

ME2302 N沟道MOSFET 20V 2.8A SOT-23/SC-59 marking/标记 I19RY1 超低导通电阻

最大源漏极电压Vds Drain-Source Voltage| 20V

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最大栅源极电压Vgs± Gate-Source Voltage| 8V

最大漏极电流Id Drain Current| 2.8A

源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.085Ω/Ohm 22.5A,4.5V

开启电压Vgs（th） Gate-Source Threshold Voltage| 0.6-1.2V

耗散功率Pd Power Dissipation| 1.25W

Description & Applications| Standard Mini SMD LED DESCRIPTION The new MiniLED series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MiniLED is an obvious solution for small-scale, high-power products that are expected to work reliability in an arduous environment. This is often the case in automotive and industrial application. RDSON≦85mΩ@VGS=4.5V RDSON≦115mΩ@VGS=2.5V RDSON≦135mΩ@VGS=1.8V Super high density cell design for extremely low RDSON Exceptional on-resistance and maximum DC current capability

描述与应用| 标准迷你型SMD LED 说明 已经设计了一个白色的小新MiniLED系列 SMT封装。该设备的特点是非常小 包2.3毫米×1.3毫米×1.4毫米。该MiniLED是 小规模，高功率产品，显而易见的解决方案 预计在艰苦环境中工作的可靠性。 这通常是在汽车和工业应用的情况下。 超高密度电池设计极低的RD（ON） 卓越的导通电阻和最大DC电流能力