BAT854CW,115
NXP BAT854CW,115 小信号肖特基二极管, 双共阴极, 40 V, 200 mA, 550 mV, 1 A, 150 °C
The is a planar double Schottky Barrier Diode encapsulated in a SOT323 very small surface-mounted device SMD plastic package. Single diode and double diode with different pinning are available. It is used for ultra high-speed switching, voltage clamping, protection circuits, blocking diodes and low power consumption applications e.g. hand-held applications.
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- Very low forward voltage
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- Very low reverse current
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- Guard ring protected
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- AEC-Q101 qualified