MMSS8050-H-TP

MMSS8050-H 系列 25 V 1.5 A NPN 硅 塑料密封 晶体管-SOT-23

If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.