APT75GP120B2G

APT75GP120B2G 单 1200 V 100 A 1042 W 320 nC POWER MOS 7® IGBT - TO-247-3

You won"t need to worry about any lagging in your circuit with this IGBT transistor from . It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 1042000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.