IPD50P04P4L11ATMA1

INFINEON  IPD50P04P4L11ATMA1  晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0082 ohm, -10 V, -1.7 V

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 40V 50A TO252-3

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET IPD50P04P4L11ATMA1, 50 A, Vds=40 V, 3引脚 DPAK TO-252封装

贸泽:
MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2

艾睿:
Make an effective common source amplifier using this IPD50P04P4L11ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 58000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 40V 50A 3-Pin2+Tab TO-252

TME:
Transistor: P-MOSFET; unipolar; -40V; -50A; 58W; PG-TO252-3-313

Verical:
Trans MOSFET P-CH 40V 50A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD50P04P4L11ATMA1  MOSFET, P CH, -40V, -50A, TO-252-3

Win Source:
MOSFET P-CH 40V 50A TO252-3