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SN74CB3Q3245

8 位 2.5V/3.3V 低电压 FET 总线开关

The is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance ron. The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output I/O ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3245 is organized as an 8-bit bus switch with a single output-enable OE\\ input. When OE\ is low, the bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the bus switch is OFF and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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High-Bandwidth Data Path Up to 500 MHz
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Equivalent to IDTQS3VH384 Device
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5-V Tolerant I/Os with Device Powered-Up or Powered-Down
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Low and Flat ON-State Resistance ron Characteristics Over Operating Range ron = 4 Typical
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Rail-to-Rail Switching on Data I/O Ports
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0- to 5-V Switching With 3.3-V VCC
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0- to 3.3-V Switching With 2.5-V VCC
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Bidirectional Data Flow, With Near-Zero Propagation Delay
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Low Input/Output Capacitance Minimizes Loading and Signal Distortion CioOFF = 3.5 pF Typical
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Fast Switching Frequency fOE\ = 20 MHz Max
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Data and Control Inputs Provide Undershoot Clamp Diodes
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Low Power Consumption ICC = 1 mA Typical
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VCC Operating Range From 2.3 V to 3.6 V
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Data I/Os Support 0 to 5-V Signaling Levels 0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V
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Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
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Ioff Supports Partial-Power-Down Mode Operation
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Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
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ESD Performance Tested Per JESD 22
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2000-V Human-Body Model A114-B, Class II
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1000-V Charged-Device Model C101
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Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the application report, _CBT-C, CB3T, and CB3Q Signal-Switch Families_, literature number SCDA008.

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