IRLML2402PBF

INFINEON  IRLML2402PBF  晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV

The is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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Industry-standard pinout

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MSL1, Consumer qualification

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Low profile <1.1mm

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Fast switching speed

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Ultra low on resistance