MMRF1305HR5

RF Power Transistor,1.8 to 2000MHz, 100W, Typ Gain in dB is 27.2 @ 512MHz, 50V, LDMOS, SOT1827

RF Mosfet LDMOS（双） 50 V 100 mA 512MHz 26dB 100W NI-780-4

得捷:
FET RF 2CH 133V 512MHZ NI-780-4

立创商城:
MMRF1305HR5

艾睿:
Trans RF MOSFET N-CH 133V 5-Pin NI-780 T/R

安富利:
Trans MOSFET N-CH 141V 4-Pin NI-780H T/R

Verical:
Trans RF MOSFET N-CH 133V 5-Pin NI-780 T/R

RfMW:
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827