JANS2N3637

PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR

This PNP general purpose bipolar junction transistor from is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 175 V and a maximum emitter base voltage of 5 V.