IPD60R380C6ATMA1

INFINEON  IPD60R380C6ATMA1  功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V

CoolMOS™C6/C7 功率 MOSFET

欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPD60R380C6ATMA1, 10.6 A, Vds=650 V, 3引脚 DPAK TO-252封装

得捷:
MOSFET N-CH 600V 10.6A TO252-3

贸泽:
MOSFET N-Ch 600V 10.6A DPAK-2

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPD60R380C6ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 83000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos c6 technology.

安富利:
Trans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R

富昌:
IPD60R380C6 系列 600 V 10.6 A 380 mOhm CoolMOS™ C6 功率 晶体管-PG-TO252-3

Verical:
Trans MOSFET N-CH 600V 10.6A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD60R380C6ATMA1  Power MOSFET, N Channel, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 600V 10.6A TO252-3 / N-Channel 600 V 10.6A Tc 83W Tc Surface Mount PG-TO252-3