PMFPB8032XP
NXP PMFPB8032XP 晶体管, MOSFET, P沟道+肖特基, 3 A, 20 V, 0.08 ohm, 4.5 V, -600 mV
The is a P-channel enhancement-mode small-signal FET using Trench MOSFET technology. It is combined with an ultra-low VF maximum efficiency general application Schottky diode and leadless ultra-thin surface-mount plastic package.
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- 1.8V RDS ON rated for low-voltage gate drive
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- Small and leadless ultra thin SMD plastic package
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- Exposed drain pad for excellent thermal conduction
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- Integrated ultra low VF MEGA Schottky diode
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- -55 to 150°C Junction temperature range