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RN1104MFVTPL3

VESM NPN 50V 100mA

* Ultra-small package, suited to very high density mounting * Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. * A wide range of resistor values is available for use in various circuits. * Complementary to the RN2101MFV to RN2106MFV


艾睿:
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R


安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-723 Embossed T/R


Chip1Stop:
Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R


RN1104MFVTPL3 PDF数据文档
图片 型号 厂商 下载
RN1104MFVTPL3 Toshiba 东芝
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