DIODE FAST REC 100V 1A DO214AC
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
得捷:
DIODE GEN PURP 100V 1A DO214AC
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | US1BHE3_A/H | Vishay Semiconductor 威世 | |
 | US1B | Multicomp | |
 | US1B R3 | Taiwan Semiconductor 台湾半导体 | |
 | US1B R2 | Taiwan Semiconductor 台湾半导体 | |
 | US1B-TP | Micro Commercial Components 美微科 | |
 | US1BFA | Fairchild 飞兆/仙童 | |
 | US1B-E3/61T | Vishay Semiconductor 威世 | |
 | US1B-E3/5AT | Vishay Semiconductor 威世 | |
 | US1BHE3_A/I | Vishay Semiconductor 威世 | |
 | US1BHE3/5AT | Vishay Semiconductor 威世 | |
 | US1BHE3/61T | Vishay Semiconductor 威世 |
