IRF830B

500V N沟道MOSFET 500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Features

• 4.5A, 500V, RDSon= 1.5Ω@VGS= 10 V

• Low gate charge typical 27 nC

• Low Crss typical 17 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability