FZT591TA

FZT591 系列 PNP 1 A 60 V 表面贴装 硅 中等功率 晶体管 - SOT-223

Use this versatile PNP GP BJT from Zetex to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.