LET9060S

在塑料包装射频功率晶体管LDMOS增强技术 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Ideal for radio frequency environments this RF amplifier from STMicroelectronics is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 170000 mW. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.

得捷:
IC RF POWER MOSFET N-CH PWRSO10

艾睿:
Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF Straight lead Tube

Verical:
Trans RF FET N-CH 65V 7A 3-Pin PowerSO-10RF Straight lead Tube

DeviceMart:
IC RF POWER MOSFET N-CH PWRSO10