LET20030C

射频功率晶体管LDMOS增强技术 RF POWER TRANSISTORS Ldmos Enhanced Technology

Ideal for radio frequency environments this RF amplifier from STMicroelectronics is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 108000 mW. Its maximum frequency is 2000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C.

得捷:
FET RF 80V 2GHZ M243

艾睿:
Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-243 Loose

安富利:
Trans MOSFET N-CH 80V 9A 2-Pin M243 Loose Piece

Chip1Stop:
Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-243

Verical:
Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-243 Loose

DeviceMart:
MOSF RF PWR N CH 80V LDMOST M243