MMSTA06-7-F

DIODES INC.  MMSTA06-7-F  单晶体管 双极, NPN, 80 V, 100 MHz, 200 mW, 500 mA, 100 hFE

- 双极 BJT - 单 NPN 100MHz 表面贴装型 SOT-323

得捷:
TRANS NPN 80V 0.5A SOT323

立创商城:
NPN 80V 500mA

贸泽:
Bipolar Transistors - BJT 80V 200mW

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMSTA06-7-F GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 4 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
Transistor NPN 80V 0.5A SOT323

安富利:
Trans GP BJT NPN 80V 0.5A 3-Pin SOT-323 T/R

富昌:
MMSTA06 系列 NPN 80 V 200 mW 小信号 晶体管 表面贴装 - SOT-323

Verical:
Trans GP BJT NPN 80V 0.5A Automotive 3-Pin SOT-323 T/R

儒卓力:
**NPN TRANS 80V 0,5A SOT323 **

Win Source:
TRANS NPN 80V 0.5A SC70-3

DeviceMart:
TRANSISTOR NPN 80V SC70-3