IRLML6302

IRLML6302 P沟道MOS场效应管 -780mA 0.60ohm SOT-23 marking/标记 1CKU 超低导通电阻 低栅极电荷

最大源漏极电压VdsDrain-Source Voltage| \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| -780mA/-0.78A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.60Ω @-600mA,-4.5V 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.70V 耗散功率PdPower Dissipation| 540mW/0.54W Description & Applications| Ultra Low On-Resistance P-Channel MOSFET Surface Mount lAvailable in Tape & Reel Low Gate Charge 描述与应用| 超低导通电阻 P沟道MOSFET 表面贴装 在磁带和卷轴lAvailable 低栅极电荷

DeviceMart:
소신호용 P-Channel MOSFET, Vdss = -20V, Rds = 0.60Ω, SOT-23