2N6849

INTERNATIONAL RECTIFIER  2N6849  晶体管, MOSFET, P沟道, 6.5 A, -100 V, 300 mohm, -10 V, -4 V

The is a -100V single P-channel Hi-Rel MOSFET with superior reverse energy and diode recovery dv/dt capability. The HEXFET® technology is the key to "s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves very low on-state resistance combined with high transconductance. The IRFF9130 HEXFET transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. It is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

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Repetitive avalanche ratings

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Dynamic dv/dt rating

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Hermetically sealed

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Simple drive requirements

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Ease of paralleling ESD rating - Class 1C per MIL-STD-750, method 1020

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±20V Gate to source voltage

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0.20W/°C Linear derating factor

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-6.5A Avalanche current IAR

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5°C/W Thermal resistance, junction to case

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175°C/W Thermal resistance, junction to ambient

ESD sensitive device, take proper precaution while handling the device.