BFS481

NPN硅晶体管RF NPN Silicon RF Transistor

Summary of Features:

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For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA

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fT = 8 GHz, F = 0.9 dB at 900 MHz

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Two galvanic internal isolated Transistors in one package

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For orientation in reel see package information in Datasheet

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Pb-free RoHS compliant package

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Qualification report according to AEC-Q101 available