BSC017N04NSGATMA1

BSC017N04NS 系列 40 V 1.7 mOhm N沟道 OptiMOS™3 功率-MOSFET - PG-TDSON-8

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 40V 30A/100A TDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC017N04NSGATMA1, 100 A, Vds=40 V, 8引脚 TDSON封装

贸泽:
MOSFET MV POWER MOS

艾睿:
This BSC017N04NSGATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

富昌:
BSC017N04NS 系列 40 V 1.7 mOhm N沟道 OptiMOS™3 功率-MOSFET - PG-TDSON-8

TME:
Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R

Win Source:
MOSFET N-CH 40V 30A/100A TDSON / N-Channel 40 V 30A Ta, 100A Tc 2.5W Ta, 139W Tc Surface Mount PG-TDSON-8-1