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BAV 199 E6327

INFINEON  BAV 199 E6327  二极管 小信号, AEC-Q101, 双隔离, 75 V, 200 mA, 1.1 V, 600 ns, 4.5 A

The BAV199 from is surface mount, dual Isolated, silicon low leakage diode in SOT-23 package. These diodes are featured with medium speed switching, applicable at low leakage and switching applications.

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Automotive grade AEC-Q101 qualified
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Maximum repetitive reverse voltage of 85V
.
Power dissipation is 330mW
.
Operating junction temperature of 150°C
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Non repetitive peak forward surge current is 4.5A
.
Forward voltage of 1.25V at IF 150mA

BAV 199 E6327 PDF数据文档
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