BC817K40E6433HTMA1

BC817K 系列 NPN 45 V 500 mA 表面贴装 硅 AF 晶体管 - SOT-23-3

通用 NPN ，

得捷:
TRANS NPN 45V 500MA SOT23-3

欧时:
Infineon BC817K40E6433HTMA1 , NPN 晶体管, 500 mA, Vce=45 V, HFE:40, 3引脚 SOT-23封装

艾睿:
Implement this NPN BC817K40E6433HTMA1 GP BJT from Infineon Technologies to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

Verical:
Trans GP BJT NPN 45V 0.5A 500mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS NPN 45V 0.5A SOT-23