SBC856BWT1G

单晶体管 双极, PNP, -65 V, 100 MHz, 150 mW, -100 mA, 220 hFE

Jump-start your electronic circuit design with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V.