SPW20N60CFDFKSA1

INFINEON  SPW20N60CFDFKSA1  功率场效应管, MOSFET, N沟道, 8.3 A, 600 V, 0.19 ohm, 10 V, 4 V

通孔 N 通道 20.7A（Tc） 208W（Tc） PG-TO247-3

得捷:
MOSFET N-CH 650V 20.7A TO247-3

艾睿:
As an alternative to traditional transistors, the SPW20N60CFDFKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 208000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Verical:
Trans MOSFET N-CH 650V 20.7A 3-Pin3+Tab TO-247 Tube

Newark:
# INFINEON  SPW20N60CFDFKSA1  Power MOSFET, N Channel, 20.7 A, 650 V, 0.19 ohm, 10 V, 4 V