BDX33B

达林顿互补硅功率晶体管 Darlington Complementary Silicon Power Transistors

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The , BDX33C, BDX34B and BDX34C are complementary devices.

Features

---

 |

.

High DC Current Gain -

hFE = 2500 typ. at IC = 4.0

.

Collector-Emitter Sustaining Voltage at 100 mAdc

VCEOsus = 80 Vdc min. BDX33B, 34B

VCEOsus = 100 Vdc min. - BDX33C, 34C

.

Low Collector-Emitter Saturation Voltage

CEsat = 2.5 Vdc max. at IC = 3.0 Adc BDX33B, 33C/34B, 34C

.

Monolithic Construction with Build-In Base-Emitter Shunt resistors

.

TO-220AB Compact Package

.

Pb-Free Packages are Available