PTRA093302FCV1R2XTMA1

High Power RF LDMOS FET, 330W, 50V, 746 – 768MHz

Summary of Features:

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Input matched

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Asymmetric Doherty design

\- Main: P 1dB = 150 W Typ

\- Peak: P 1dB = 175 W Typ

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Typical Pulsed CW performance, 746–768 MHz, 48 V, combined outputs

\- Output power at P 1dB = 200 W

\- Efficiency = 54%

\- Gain = 16.5 dB

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Capable of handling 10:1 VSWR @ 48 V, 79 W CW output power

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Integrated ESD protection

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Human Body Model Class 1C per ANSI/ESDA/JEDEC JS-001

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Low thermal resistance

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Pb-free and RoHS-compliant