PMV40UN2

NXP  PMV40UN2  晶体管, MOSFET, N沟道, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV

The is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications.

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Low threshold voltage

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Very fast switching

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Enhanced power dissipation capability of 1000mW

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-55 to 150°C Junction temperature range