硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance
RDS on = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Chip1Stop:
Trans MOSFET N-CH 80V 75A 3-Pin3+Tab TO-220AB
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | 2SK3228-E | Renesas Electronics 瑞萨电子 | |
 | 2SK3569 | Toshiba 东芝 | |
 | 2SK3666-3-TB-E | ON Semiconductor 安森美 | |
 | 2SK3666-2-TB-E | ON Semiconductor 安森美 | |
 | 2SK3738-TL-E | ON Semiconductor 安森美 | |
 | 2SK33720SL | Panasonic 松下 | |
 | 2SK3796-3-TL-E | ON Semiconductor 安森美 | |
 | 2SK3320-GRTE85L,F | Toshiba 东芝 | |
 | 2SK3796-2-TL-E | ON Semiconductor 安森美 | |
 | 2SK3666-4-TB-E | ON Semiconductor 安森美 | |
 | 2SK33720RL | Panasonic 松下 |
