IXGT16N170

Trans IGBT Chip N-CH 1700V 32A 190000mW 3Pin2+Tab TO-268

This IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 190000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
IGBT 1700V 32A 190W TO268

贸泽:
IGBT Transistors 32 Amps 1700 V 3.5 V Rds

艾睿:
Trans IGBT Chip N-CH 1.7KV 32A 3-Pin2+Tab TO-268