Standard Power MOSFET N-channel Enhancement Mode: 500V, 12A
Features
● International standard packages
● Low R DS onHDMOS™ process
● Rugged polysilicon gate cell structure
●Low package inductance < 5 nH
\- easy to drive and to protect
● Fast switching times
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | IXTH12N50A | IXYS Semiconductor | |
 | IXTH200N075T | IXYS Semiconductor | |
 | IXTH200N085T | IXYS Semiconductor | |
 | IXTH88N15 | IXYS Semiconductor | |
| IXTH28N50Q | IXYS Semiconductor | |
 | IXTH24N50Q | IXYS Semiconductor | |
 | IXTH1N250 | IXYS Semiconductor | |
 | IXTH182N055T | IXYS Semiconductor | |
 | IXTH240N055T | IXYS Semiconductor | |
 | IXTH230N085T | IXYS Semiconductor | |
 | IXTH220N055T | IXYS Semiconductor |
