BD249C

MULTICOMP  BD249C  单晶体管 双极, 通用, NPN, 100 V, 125 W, 25 A, 25 hFE

The from are through hole, NPN complementary power transistor in TO-247 metal can package. This device is used for switching and amplification.

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Collector emitter voltage Vce of 100V

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Continuous collector current Ic of 25A

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Power dissipation of 125mW

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Operating junction temperature range from -65°C to 150°C

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Collector emitter saturation voltage of 4V at Ic=25A

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DC current gain of 5 at Ic=25A