TSML1020

VISHAY  TSML1020  红外发射器, 高功率, 12 °, 20 mA, 1.2 V, 800 ns, 800 ns

The is a 940nm Infrared Emitting Diode in GaAlAs multi quantum well MQW technology. It is moulded in a clear, untinted plastic package with lens for surface mounting SMD.

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High speed

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High radiant power

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High radiant intensity

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ϕ = ±12° Angle of half intensity

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Low forward voltage

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Suitable for high pulse current operation

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Good spectral matching with Si photodetectors

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Versatile terminal configurations