TO-220SIS N-CH 900V 4A
Switching Regulator Applications
• Low drain-source ON resistance: RDS ON= 2.5Ωtyp.
• High forward transfer admittance: |Yfs | = 2.8 S typ.
• Low leakage current: IDSS= 100 μA VDS= 720 V
•Enhancement-mode: Vth= 2.0 to 4.0 V VDS= 10 V, ID= 1 mA
Win Source:
Silicon N Channel MOS Type Switching Regulator Applications
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | 2SK3798 | Toshiba 东芝 | |
 | 2SK3569 | Toshiba 东芝 | |
 | 2SK3666-3-TB-E | ON Semiconductor 安森美 | |
 | 2SK3666-2-TB-E | ON Semiconductor 安森美 | |
 | 2SK3738-TL-E | ON Semiconductor 安森美 | |
 | 2SK33720SL | Panasonic 松下 | |
 | 2SK3796-3-TL-E | ON Semiconductor 安森美 | |
 | 2SK3320-GRTE85L,F | Toshiba 东芝 | |
 | 2SK3796-2-TL-E | ON Semiconductor 安森美 | |
 | 2SK3666-4-TB-E | ON Semiconductor 安森美 | |
 | 2SK33720RL | Panasonic 松下 |
