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BS170-D26Z

BS170-D26Z 编带

The BS170_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using Fairchild"s proprietary, high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.

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High density cell design for low RDS ON
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Voltage controlled small signal switch
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Rugged and reliable
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High saturation current capability
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60V Drain gate voltage VDGR
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±20V Continuous gate source voltage VGSS
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150°C/W Thermal resistance, junction to ambient

BS170-D26Z PDF数据文档
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