IXFN27N80Q

IXYS SEMICONDUCTOR  IXFN27N80Q  功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V

The is a Q-class HiPerFET™ N-channel enhancement-mode Single Die Power MOSFET features avalanche rated and fast intrinsic rectifier.

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International standard package

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miniBLOC with aluminium nitride isolation

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UL94V-0 Flammability rating

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Unclamped inductive switching UIS rated

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Rugged polysilicon gate cell structure

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Low package inductance

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Easy to mount

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Space savings

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High power density

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High dV/dt and low trr