MSB92ASWT1G

PNP硅通用高压晶体管 PNP Silicon General Purpose High Voltage Transistor

Jump-start your electronic circuit design with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.