FMMT717

DIODES INC.  FMMT717  单晶体管 双极, PNP, 12 V, 110 MHz, 625 mW, -2.5 A, 475 hFE

The is a PNP silicon power switching Bipolar Transistor offers 625mW power dissipation and extremely low saturation voltage.

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10A Peak pulse current

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Excellent hFE characteristics up to 10A

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Exhibits extremely low equivalent on resistance

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NPN complement is FMMT617

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-55 to 150°C Operating temperature range