BD680

PNP 复合晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。

PNP 复合，STMicroelectronics

### 双极晶体管，STMicroelectronics

STMicroelectronics 的各种 NPN 和 PNP ，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。

得捷:
TRANS PNP DARL 80V 4A SOT32-3

欧时:
### PNP 复合晶体管，STMicroelectronics![http://china.rs-online.com/largeimages/LBIPOLAR-23.gif]http://china.rs-online.com/largeimages/LBIPOLAR-23.gif ### 双极晶体管，STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。

立创商城:
BD680

e络盟:
单晶体管 双极, 达林顿, PNP, 60 V, 40 W, 4 A, 750 hFE

艾睿:
Are you looking for an amplified current signal in your circuit? The PNP BD680 Darlington transistor from STMicroelectronics yields a much higher gain than other transistors. This product&s;s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@1.5A@3 V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A V. This Darlington transistor array&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

安富利:
Trans Darlington PNP 80V 4A 3-Pin3+Tab SOT-32 Tube

富昌:
BD6xxx 系列 80 V 4 A PNP互补功率达林顿晶体管 - SOT-32

Chip1Stop:
Trans Darlington PNP 80V 4A 3-Pin3+Tab SOT-32 Tube

TME:
Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; SOT32

Verical:
Trans Darlington PNP 80V 4A 40000mW 3-Pin3+Tab SOT-32 Tube

Newark:
# STMICROELECTRONICS  BD680  Bipolar BJT Single Transistor, Darlington, PNP, 60 V, 40 W, 4 A, 750

儒卓力:
**PNP DARLINGTON 80V 4A 40W SOT32 **

Win Source:
TRANS PNP DARL 80V 4A SOT-32

DeviceMart:
TRANS DARL PNP 80V SOT-32