DTB513ZM

DTB513ZM 带阻尼PNP三极管 -50V -500mA/0.5A 0.15W/150mW sot-723/VMT3 标记Y11 开关电路，逆变器，接口电路，驱动电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -12V 集电极连续输出电流IC Collector CurrentIC| -500mA/0.5A 基极输入电阻R1 Input ResistanceR1| 1KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 10KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 0.1 直流电流增益hFE DC Current GainhFE| 截止频率fT Transtion FrequencyfT| 260MHz 耗散功率Pc Power Dissipation| 0.15W/150mW Description & Applications| Features •-500mA / -12V Low VCE sat Digital transistors with built-in resistors •VCE sat is lower than conventional products. •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit. •The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. •Only the on / off conditions need to be set for operation, making the device design easy. 描述与应用| 特点 •500毫安/-12V低VCE（sat）的数字晶体管（内置电阻）VCE（sat）的是比传统产品低。 •内置启用偏置电阻器的配置，逆变电路没有连接外部输入电阻（见等效电路）。 •偏置电阻组成的薄膜电阻完全隔离，允许正面偏置输入。他们也有优势，几乎完全消除了寄生效应。 •只有开/关条件需要设置操作，使装置的设计容易。